RU2YXZ
更新时间：2024-09-18 05:28:32
描述：HIGH EFFICIENCY RECTIFIER
概述
数据手册RU2YXZ 概述
HIGH EFFICIENCY RECTIFIER 高效率整流
RU2YXZ 数据手册
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PDF下载GALAXY ELECTRICAL
RU2YX(Z) --- RU2C(Z)
BL
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 1.5 --- 0.8 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
DO - 15L
Low forward voltage drop
Easily cleaned with freon, alcohol, lsopropand
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case: JEDEC DO-15L, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces, 0.48 grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU2YX
RU2Y
RU2
RU2B
RU2C UNITS
Maximum peak repetitive reverse voltage
Maximum RMS voltage
100
70
VRRM
VRMS
VDC
200
140
200
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
100
1000
Maximum average forw ard rectified current
1.5
1.0
0.8
A
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
30.0
0.95
20.0
1.5
A
V
IFSM
@TJ=125
Maximum instantaneous forw ard voltage
@ IF=IF(AV)
VF
IR
Maximum reverse current
@TA=25
10.0
A
at rated DC blocking voltage @TA=100
300.0
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
50
100
trr
ns
(Note2)
(Note3)
50
30
CJ
pF
15
/W
Rθ
JL
Operating junction temperature range
- 55 ----- + 150
- 55 ----- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A,IR=1A,Irr=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction ambient
1.
Document Number 0262042
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
RU2YX(Z)---RU2C(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
10
N 1.
N 1.
+0.5A
D.U.T.
0
(+)
PULSE
25VDC
(approx)
(-)
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SET TIMEBASEFOR10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
1.5
100
RU2YX
RU2YX
10
RU2Y,RU2,RU2B
1.2
RU2Y,RU2,RU2B
TJ=25
Pulse Width=300µS
1.0
0.9
1.0
0.8
RU2C
0.6
RU2C
Single Phase
0.1
Half Wave 60Hz
0.3
0.04
Resistive or
Inductive Load
0.01
25
50
75
100
125
150
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8 2
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- PEAK FORWARD SURGE CURRENT
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
30
8.3ms Single Half
Sine-W ave
RU2,RU2B,RU2C
60
40
RU2Y,RU2,RU2B,RU2C
20
RU2YX,RU2Y
20
10
4
10
TJ=25
RU2YX
2
1
0
0.1 0.2 0.4
1
2
4
10 20
40
100
1
5
10
50
AMBIENTTEMPERATURE,
NUMBER OF CYCLES AT60Hz
www.galaxycn.com
2.
Document Number 0262042
BLGALAXY ELECTRICAL
RU2YXZ 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| RU2YZ | BL Galaxy Electrical | HIGH EFFICIENCY RECTIFIER | 获取价格 |
|
| RU2Z | EIC | FAST RECOVERY RECTIFIER DIODES | 获取价格 |
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| RU2Z | BL Galaxy Electrical | HIGH EFFICIENCY RECTIFIER | 获取价格 |
|
| RU2Z | SANKEN | Fast-Recovery Rectifier Diodes | 获取价格 |
|
| RU2Z | TAYCHIPST | Ultra-Fast-Recovery Rectifier Diodes | 获取价格 |
|
| RU2Z | SUNMATE | 1.0A plug-in fast recovery diode 200V DO-15 series | 获取价格 |
|
| RU2ZV | SANKEN | Rectifier Diode, 1 Element, 1A, Silicon | 获取价格 |
|
| RU2ZV1 | SANKEN | Rectifier Diode, 1 Element, 1A, Silicon | 获取价格 |
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| RU2ZV3 | SANKEN | Rectifier Diode, 1 Element, 1A, Silicon | 获取价格 |
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| RU2ZV4 | SANKEN | Rectifier Diode, 1 Element, 1A, Silicon | 获取价格 |
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